| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| GBU800 GBU808 |
8.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components International
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH42N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4113AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
